Infineon IPW65R018CFD7XKSA1 650V CoolMOS™ CFD7 Power MOSFET: Redefining High-Efficiency Power Conversion

The Infineon IPW65R018CFD7XKSA1 stands at the forefront of power semiconductor technology, representing a significant leap in performance for high-voltage applications. As part of Infineon’s renowned CoolMOS™ CFD7 series, this 650V Power MOSFET is engineered to deliver exceptional efficiency, reliability, and thermal performance in demanding power conversion systems.

A key highlight of this MOSFET is its ultra-low on-state resistance (RDS(on)) of just 18 mΩ, which drastically reduces conduction losses. This feature is critical in applications such as server power supplies, industrial motor drives, renewable energy inverters, and EV charging infrastructure, where minimizing energy loss is paramount. The reduced power dissipation not only enhances system efficiency but also alleviates thermal management challenges.

Another groundbreaking aspect of the CFD7 technology is the integrated fast body diode, which offers superior reverse recovery characteristics. This ensures reduced switching losses and higher reliability in hard-switching and resonant topologies like LLC converters. The diode’s robust performance allows for higher switching frequencies, enabling the design of smaller, lighter, and more cost-effective magnetics and capacitors.

The device also incorporates advanced packaging technology, optimizing thermal resistance and power density. This makes it suitable for space-constrained applications without compromising on thermal performance or long-term durability.

Moreover, the CoolMOS™ CFD7 series is designed with a strong emphasis on ease of use and system robustness, featuring improved dv/dt stability and noise immunity. These attributes simplify gate driving design and enhance overall system reliability.

ICGOOODFIND:

The Infineon IPW65R018CFD7XKSA1 exemplifies next-generation power MOSFET innovation, combining ultra-low RDS(on), an advanced body diode, and superior thermal characteristics to push the boundaries of power density and efficiency in modern electronic systems.

Keywords:

Power MOSFET, CoolMOS™ CFD7, High Efficiency, Low RDS(on), Fast Body Diode