Infineon IPB80N06S2L-07: A High-Performance 60V 80A N-Channel Power MOSFET

In the realm of power electronics, the demand for efficient, robust, and high-current switching devices is ever-increasing. The Infineon IPB80N06S2L-07 stands out as a premier N-Channel Power MOSFET engineered to meet these rigorous demands. Designed with OptiMOS™ technology, this component is a top choice for applications requiring high power density and superior efficiency.

Key Features and Benefits

The IPB80N06S2L-07 is characterized by its low on-state resistance (RDS(on)) of just 7.0 mΩ maximum at 10 V. This exceptionally low resistance minimizes conduction losses, which is critical for improving overall system efficiency and reducing heat generation. The device is rated for 80A continuous drain current and can handle pulse currents even higher, making it suitable for high-load scenarios. Its 60V drain-source voltage (VDS) rating provides ample headroom for a variety of automotive, industrial, and power supply applications, including DC-DC converters, motor control, and high-side switches.

A significant advantage of this MOSFET is its low gate charge (Qg) and fast switching capabilities. These properties ensure that the device can operate at high frequencies with minimal switching losses, further enhancing efficiency in modern switch-mode power supplies (SMPS). The component is also housed in a TO-263 (D2PAK) package, which offers an excellent balance between compact size and effective thermal performance, allowing for efficient heat dissipation.

Target Applications

This MOSFET is particularly well-suited for:

Automotive Systems: Such as electronic power steering (EPS), engine management, and braking systems.

Industrial Motor Drives: Providing reliable and efficient control for brushed and brushless DC motors.

Power Management: Serving as a key component in high-current DC-DC converters and voltage regulation modules (VRMs).

ICGOO

The Infineon IPB80N06S2L-07 is a testament to advanced power semiconductor design, offering a blend of high current handling, low losses, and robust reliability. Its optimized characteristics make it an indispensable component for designers striving to push the limits of performance and efficiency in their power electronic systems.

Keywords:

1. OptiMOS™ Technology

2. Low RDS(on)

3. High Current Switching

4. Efficiency

5. TO-263 Package