Infineon IPW60R099C7 CoolMOS™ Power Transistor: Delivering Superior Efficiency and Performance

In the rapidly evolving world of power electronics, achieving higher efficiency, greater power density, and improved thermal performance is paramount. The Infineon IPW60R099C7, a member of the revolutionary CoolMOS™ P7 family, stands out as a state-of-the-art power transistor engineered to meet these demanding challenges. This MOSFET sets a new benchmark for performance in applications such as server and telecom SMPS, industrial drives, and solar inverters.

At the heart of its innovation is an ultra-low typical on-state resistance (R DS(on)) of just 99 mΩ at a 600 V drain-source voltage. This exceptionally low resistance is a key contributor to minimizing conduction losses. When combined with the technology's superior switching characteristics, it results in significantly reduced overall power dissipation. This direct enhancement in efficiency allows designers to create more compact systems with higher power output or to improve the energy efficiency of existing designs.

Beyond raw efficiency, the IPW60R099C7 is built for robustness and reliability. The P7 series is renowned for its high immunity to avalanche and superior body diode robustness, which are critical for ensuring stable operation under harsh conditions and during fast switching events. This translates to increased system longevity and reduced failure rates. Furthermore, the technology enables higher switching frequencies, which allows for the use of smaller passive components like inductors and capacitors, ultimately leading to a reduction in system size and cost.

The transistor is also designed with ease of use in mind. Its low gate charge (Q G) ensures straightforward drive requirements, simplifying the design of the gate driver circuitry and contributing to lower switching losses. This makes it an ideal choice for both new designs and upgrades to existing platforms seeking a performance boost.

ICGOOODFIND: The Infineon IPW60R099C7 CoolMOS™ P7 is a pinnacle of power transistor technology, offering designers a potent combination of ultra-high efficiency, exceptional power density, and proven robustness. It is a critical enabler for the next generation of energy-efficient and compact power conversion systems.

Keywords: CoolMOS™ P7, High Efficiency, Low R DS(on), Power Density, Robustness.